| PART |
Description |
Maker |
| AM7200-35RC AM7200-35JC AM7200-35PC AM7200-50JC AM |
HIGH DENSITY FIRST-IN FIRST-OUT (FIFO) 256 X 9-BIT CMOS MEMORY 256 X 9 OTHER FIFO, 25 ns, PDIP28
HIGH DENSITY FIRST-IN FIRST-OUT (FIFO) 256 X 9-BIT CMOS MEMORY 256 X 9 OTHER FIFO, 50 ns, PDIP28
Circular Connector; No. of Contacts:13; Series:MS27508; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:10; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No
JT 13C 13#22D PIN WALL RECP
|
ADVANCED MICRO DEVICES INC
Advanced Micro Devices, Inc.
|
| IDT7207L30SOG IDT7207L25SOG IDT7207L40SOG IDT7207L |
CMOS ASYNCHRONOUS FIFO 16K X 9 OTHER FIFO, 50 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 32K X 9 OTHER FIFO, 20 ns, CDIP28
CMOS ASYNCHRONOUS FIFO 异步FIFO的CMOS
CMOS ASYNCHRONOUS FIFO 2K X 9 OTHER FIFO, 15 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 16K X 9 OTHER FIFO, 25 ns, CDIP28
CMOS ASYNCHRONOUS FIFO 64K X 9 OTHER FIFO, 25 ns, PDIP28
CMOS ASYNCHRONOUS FIFO 64K X 9 OTHER FIFO, 25 ns, PQCC32
CMOS ASYNCHRONOUS FIFO 64K X 9 OTHER FIFO, 20 ns, PDIP28
|
Integrated Device Technology, Inc.
|
| M66257FP M66257E M66257 |
5120 x 8-BIT x 2 LINE MEMORY (FIFO)
From old datasheet system
5120 8-BIT 2 LINE MEMORY (FIFO)
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| IDT7207L20J IDT7207L20JB IDT7207L15J IDT7207L15JB |
CMOS ASYNCHRONOUS FIFO 32,768 x 9
CMOS ASYNCHRONOUS FIFO 32768 x 9
ER 3C 3#16 PIN RECP BOX
ER 12C 12#12 SKT RECP
ER 3C 3#16S PIN RECP BOX 32K X 9 OTHER FIFO, 15 ns, CQCC32
ER 4C 4#16S PIN RECP LINE ER 4C 46S 线性插
ER 2C 2#16S PIN RECP BOX 的CMOS异步FIFO 32768 × 9
LVDS 21-Bit Serializers/De-Serializers 32K X 9 OTHER FIFO, 20 ns, QCC32
CMOS ASYNCHRONOUS FIFO 32/768 x 9
LVDS 21-Bit Serializers/De-Serializers; ; No of Pins: 48; Container: Rail
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| M6MGD13TW34DWG |
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
|
Renesas Electronics Corporation
|
| AM41DL3248GB85IT AM41DL3238GB85IT AM41DL3238GT85IS |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA73
|
Advanced Micro Devices, Inc.
SPANSION LLC
|
| M6MGB_T162S4BVP M6MGB M6MGB162S4BVP M6MGT162S4BVP |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
16,777,216-BIT (1,048,576 -WORD BY 16-BIT) CMOS 3.3V-ONLY FLASH MEMORY
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MJ2812 |
32 WORDS X 8 BIT FIFO MEMORY
|
Zarlink Semiconductor Inc.
|
| M5M29KE131BVP |
Memory>NOR type Flash Memory
134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY Stacked-uMCP (micro Multi Chip Package)
|
Renesas Electronics Corporation
|
| M66288FP |
262144-word x 8-bit x 3-FIFO MEMORY
|
Renesas Electronics Corporation
|
| M6MGD13TW66CWG-P |
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM 134217728位（8388608字由16位）的CMOS闪存
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
|
Renesas Electronics, Corp.
Renesas Electronics Corporation
|
